COMRAD open positions

Marie Sklodowska-Curie ITN programme “Cold Opto-Magnetism for Random Access Devices” (COMRAD) opens 14 positions for PhD students (Early Stage Researchers) in the Netherlands, Germany, Poland, France, Italy, Spain and the UK.

The ambition of COMRAD is to discover and explore novel routes for the fastest possible as well as least dissipative control of magnetism leading to the ‘greenest’ memory devices. COMRAD combines partners from industry, universities and research centres working on magnetic thin film technology and storage from theoretical, experimental as well as engineering sides. The project will apply novel experimental, theoretical and computational approaches in ultrafast magnetism, photo-magnetic recording, atomistic spin modelling, microscopic theory of spin transport, spin-orbitronics, development of novel microscopes and memory devices. Employed PhD students will receive multidisciplinary training to expedite the translation of fundamentally intriguing, recently discovered phenomena into conceptually new products or even technology beyond the state-of-the-art.

Please see detailed description of the positions in experimental, theoretical, computational physics and physics of devices.

Interested candidates are welcome to apply either for a specific position or to several positions, indicating their preferences, in the program via COMRAD job application form.

During the submission you will be asked to upload your motivation letter, CV and provide the names of two Referees.

Applicants must be in the first 4 years after obtaining their Master´s degree and must  not  have  resided  or  carried  out  their  main  activity (work, studies,  etc.) in the host country for more than 12 months in the 3 years immediately before the recruitment date. In addition, local regulations of the host countries may apply. The salary is based on standard living, mobility and family allowances which are adapted to the respective country of recruitment.

People who do not have their diploma yet, but planning to receive it in the coming 6 months are also encouraged to apply, but in this case additional documents can be requested.

Applications should be submitted not later than December 1, 2020. Upon receiving an application, we aim to proceed with interviews and evaluations of the eligible candidates without a delay. Candidates interested in a specific position are advised to apply as soon as possible. The interviews and the final decision are made locally by each partner of the project.

The following positions are currently available within COMRAD network.

Least dissipative routes for opto-magnetism

Host organization: Department of Ultrafast Spectroscopy of Correlated Materials, Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands

Main objectives of the ESR-project: 

This project builds on our pioneering work in opto-magnetism: the ultrafast control of magnetism with ultrashort laser pulses. In this approach, light is directly used to perturb the intrinsic magnetic interactions – the strongest magnetic interactions responsible for the ordering of microscopic spins and stability of magnetic bits, i.e. the magnetic anisotropy. We already discovered several opto-magnetic effects in a wide range of photon energies (4 meV to 0.2 eV). However, further optimization remains a challenge, in particular to enhance the effect while simultaneously minimizing dissipation. Ultimately, this project aims to reveal the least dissipative control of dynamic magnetic anisotropy and long-range order of microscopic spins.

Electrically assisted laser-induced switching in substituted Y3Fe5O12 for femtosecond laser driven memory devices

Host organization: Department of Ultrafast Spectroscopy of Correlated Materials, Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands

Main objectives of the ESR-project:

Ever since our pioneering discovery of femtosecond all-optical switching of magnetic domains, it remained a challenge to scale this effect down to the nanoscale. Simply stronger focusing is not a solution, given that nanoscale memory has sub-wavelength dimensions. This project aims to bypass this limitation, by experimental investigations on the electric field control of optical switching. Ultimately, the aim is to demonstrate nanoscale electrically assisted optical switching, where electric fields confined at the nanoscale constrain the part of the illuminated area that is optically switchable.

Electrical detection of optically-induced magnetisation switching

Host organization: Faculty of the Institute of Experimental and Applied Physics, University of Regensburg

Main objectives of the ESR-project: To fabricate, characterize and measure GaAs(p-i-n)/FM pillar structures for ps-pulse generation. Writing is realised by the fs- laser pulse, which excites the FM and generates simultaneously a bias-dependent spin-polarised (helicity dependent) photo- current pulse, which is injected into the FM. The read-out is realised by an electrical anomalous Hall effect measurement; or by an opto-electrical magnetoresistance measurement with a spin-polarised probe-current generated also by a circularly polarised probe laser pulse.

Bridging all-optical and electrical switching in Co/Pt-based multilayers

Host organization: Group Physics of Nanostructures at the Department of Applied Physics of the Eindhoven University of Technology

Main objectives of the ESR-project: This project is bridging spintronics with femtomagnetism, exploiting the group’s expertise in this novel, hybrid research area. The ESR will design and grow his/her own multilayer samples using our NanoAccess facility, and will perform fs pump-probe magneto-optical studies. Experiments will encompass the use of optically-excited femtosecond spin currents and all-optical switching to investigate the role of spin-orbit phenomena such as the spin-Hall effect and the Dzyaloshinskii-Moriya in sub-ps magnetization dynamics. Thus, the ESR will be challenged to explore the ultimate limits of spin-orbit torques, pushing the field to the femtosecond regime.